Flash memory breakthrough could help supercharge NAND production for SSD, memory cards – but does it actually matter?
Posted by:
David Wilson
Researchers have discovered a more efficient way to carve deep holes for 3D NAND storage, potentially reducing costs. The new plasma-based cryo-etching method, developed by a team from Lam Research, the University of Colorado Boulder, and the PPPL, doubles the etching speed, allowing for quicker production of memory cells stacked vertically. While this technical advancement shows promise in streamlining production, its practical impact on end users in terms of improved or cheaper storage devices remains uncertain. Stay tuned for more advancements in memory technology.
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