SK Hynix, a major player in the memory chip market, has introduced a groundbreaking 321-layer NAND flash solution that boosts data transfer speeds by 12%. This innovation is aimed at meeting the growing storage requirements driven by artificial intelligence technology. The company’s new product, a 1-terabit TLC 4D NAND flash, promises to revolutionize the data storage industry by enabling the production of more affordable ultra-high-capacity solid-state drives exceeding 100TB.

SK Hynix’s latest achievement follows its successful launch of a 238-layer NAND flash last year, setting a new standard in the industry. The new 321-layer technology is made possible by the company’s advanced “Three Plugs” process, enhancing speed, power efficiency, and overall performance of the chips. This cutting-edge product offers a 12% increase in data transfer speed, a 13% improvement in reading performance, and over 10% reduction in power consumption compared to the previous 238-layer NAND.

While SK Hynix leads the innovation race, Samsung is not far behind, with plans to release a 400-layer NAND flash chip by 2026. Samsung aims to break the 200TB storage barrier for AI-driven SSDs with chips exceeding 1,000 layers by 2030. This competition demonstrates the industry’s commitment to pushing boundaries in data storage technology to meet the demands of artificial intelligence applications.

In a rapidly evolving technological landscape, these advancements from leading companies like SK Hynix and Samsung signal a bright future for high-performance NAND solutions tailored for AI data centers and on-device AI applications.